interband transition
英
美
网络 带间跃迁; 能带间电子跃迁
双语例句
- The fractional-dimensional space approach has been developed and applied to direct interband transition.
本论文发展并把分数维空间方法用于半导体带间跃迁光谱的分析上。 - The characterises of the absorption spectra can be well explained with the theory of the indirect interband transition.
用带际间接光学跃迁的理论完满解释了吸收光谱的特性。 - The interband transition is taken into account in the collision term of the Boltz-mann equation which describes the carrier transport process in semiconductors.
在描述载流子输运过程的玻尔兹曼方程的碰撞项中考虑了带间跃迁的贡献，从而将它推广到存在非平衡载流子的情况。 - Accurately Determining the Position of Interband Transition Energy for the Ga xIn 1-x P by the Third Derivative Spectra of Dielectric Functions
用介电函数的三级微商谱精确确定GaxIn（1-x）P临界点的能量值 - Some obvious interband transition peaks have been observed by the modulated photo-reflection spectrum for S doped sample grown by MBE.
用MBE生长的δ掺杂样品进行光调制光谱测量，发现明显的带间跃迁峰。 - We have found that the photo carriers are generated mostly from the interband transitions, different to the indirect transition mechanism in c-Si.
我们发现nc-Si：H薄膜中光电子跃迁主要来源于带间跃迁，但又不同于单晶硅材料的间接跃迁。 - The studies in this thesis demonstrate that the optical interband transitions in the nc-Si: H thin film are quite different from the indirect transition in c-Si, the transition probability and optical absorption in nc-Si: H are much higher than those in c-Si.
研究表明在nc-Si：H薄膜中光电子跃迁过程明显不同于单晶硅材料中的间接跃迁过程，前者具有较高的光电子跃迁几率和较强的光学吸收。 - A simple model of calculating the linewidth enhancement factor ( a factor) is presented based on the theory of Henry. Interband transition, free carrier absorption and band gap narrowing are considered in this model.
本文从Henry提出的基本理论出发，考虑了带间跃迁、带隙收缩和自由载流子的吸收三方面因素对线宽展宽因子（α因子）的影响，给出了一种计算半导体激光器a因子的简单方法。 - The effect of interband transition becomes stronger with the pumping intensity, and it results in the negative conductivity.
随着泵浦强度的增加，石墨烯在THz波段表现出很强的带间跃迁效应，对电导率负部贡献较大。